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An almost 100% temporal aperture (dead-time free) global shutter (GS) stacked CMOS image sensor (CIS) with in-pixel lateral overflow integration capacitor (LOFIC), ADC and DRAM is developed using pixel-wise connections. The prototype chip with 6.6µm-pitch VGA LOFIC pixel dead-time free GS mode and 1.65µm-pitch 4.9M sub-pixel high resolution rolling shutter (RS) mode was fabricated with a 45nm 1P4M CIS technology for PD substrate and a 65nm 1P5M CMOS technology for ASIC substrate.
Sugo et al. (Wed,) studied this question.