December 4, 2002

1 mu m CMOS devices using low-impurity-channel transistors (LICT)

Key Points

Key points are not available for this paper at this time.

Abstract

It was found that LICTs are very effective for providing low threshold voltages with good turn-offs in 0.1 mu m CMOS devices. Attention is given to device fabrication criteria, key process technologies used, and the features achieved using LICTs.>

1 mu m CMOS devices using low-impurity-channel transistors (LICT)

Key Points

Abstract

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