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We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects, like retention at elevated temperature, operating temperature and endurance, make CBRAM a very promising non-volatile emerging memory technology
Kund et al. (Thu,) studied this question.