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Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
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Xu She
Alex Q. Huang
Óscar Lucía
IEEE Transactions on Industrial Electronics
North Carolina State University
Oak Ridge National Laboratory
University of Tennessee at Knoxville
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She et al. (Tue,) studied this question.
www.synapsesocial.com/papers/69d8f7aa6715230d10bedc20 — DOI: https://doi.org/10.1109/tie.2017.2652401