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This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential ON-resistances (R ₎₍) of 1. 5–2. 5 m ~ cm 2 and 7–9 m ~ cm 2 were obtained in the Mg-implanted and Si-implanted JBS rectifiers, respectively. A breakdown voltage of 500–600 V was achieved in both devices, with a leakage current at high reverse biases at least 100-fold lower than conventional vertical GaN Schottky barrier diodes. The impact of n-well and p-well widths on the R ₎₍ and BV was investigated. Fast switching capability was also demonstrated. This letter shows the feasibility of forming patterned p-n junctions by novel ion implantation techniques, to enable high-performance vertical GaN power devices.
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Yuhao Zhang
Zhihong Liu
Marko J. Tadjer
IEEE Electron Device Letters
Massachusetts Institute of Technology
United States Naval Research Laboratory
George Mason University
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Zhang et al. (Tue,) studied this question.
www.synapsesocial.com/papers/69d9a8019a6164e50fa3d346 — DOI: https://doi.org/10.1109/led.2017.2720689