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April 16, 2018Applied Physics Letters

High-electron-mobility InN epilayers grown on silicon substrate

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HLHuapeng LiuXWXinqiang WangZCZhaoying Chen

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Liu et al. (2018) studied this question.

synapsesocial.com/papers/6a945d47175d68f85fc57cbehttps://doi.org/10.1063/1.5017153
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