Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices

Resistive random access memory (RRAM) has attracted significant interest for next-generation nonvolatile memory applications. However, it is somehow difficult to design a high speed RRAM device with enhanced data reliability. This paper deals with the improvement of high speed durable switching in nanocrystals based RRAM (NC-RRAM) devices. The high performance RRAM devices were prepared by incorporating the NCs into the HfOx oxide layer. As compared to the without (w/o) NC devices, the NC-RRAM devices are capable to execute uniform switching with higher set speed of 100 ns and reset speed of 150 ns, longer retention time and higher endurance of 108 cycles at 85 °C. The possible switching mechanism is due to the formation and rupture of the conductive filaments (CFs) inside the oxide film. The improvement of the NC-RRAM devices is due to the enhanced electric field intensity on the surface of the NCs, which can effectively facilitate the formation and rupture of the CFs.