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Abstract Ultraviolet (UV) photodetectors with high responsivity and fast response are crucial for practical applications. Double perovskite Cs 2 AgBiBr 6 has emerged as a promising optoelectronic material due to its excellent physics and photoelectric properties. However, no work is reported based on its film for photodetector applications. Herein, an ITO/SnO 2 /Cs 2 AgBiBr 6 /Au hole‐transport layer free planar heterojunction device is fabricated for photodetector application. The device is self‐powered with two responsivity peaks at 350 and 435 nm, which is suitable for ultraviolet‐A (320–400 nm) and deep‐blue light detecting. A high responsivity of 0.11 A W −1 at 350 nm and a quick response time of less than 3 ms are obtained, which is significantly higher than other semiconductor oxide heterojunction‐based UV detectors. More importantly, the stability is significantly better than most of the hybrid perovskite photodetectors reported so far. Its photocurrent shows no obvious degradation after more than 6 months storage in ambient conditions without any encapsulation. Consequently, the utilization of Cs 2 AgBiBr 6 film is a practical approach for high performance, large‐area lead‐free perovskite photodetector applications. For the mechanism, it is found that photogenerated carriers in Cs 2 AgBiBr 6 film are separated at the Cs 2 AgBiBr 6 /SnO 2 heterojunction interface by its built‐in field. The low toxicity and high stability of this double perovskite active layer make it very promising for practical applications.
Wu et al. (Mon,) studied this question.