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We report on the growth of high quality β-Ga 2 O 3 films using metal organic chemical vapor deposition (MOCVD). Ga(DPM) 3 , TEGa, and TMGa metal organic precursors were used as Ga sources and oxygen for oxidation. Films grown from each Ga sources had high growth rates with up to 10 μm/h achieved using TMGa. To study the quality homoepitaxial layers, MOCVD was used to grow unintentionally doped (UID) and Si doped β-Ga 2 O 3 layers with a growth rate between 0.5 and 4.0 μm/h Epitaxial layers with XRD FWHM and RMS roughness 2 /Vs for n = 8×10 19 1/cm 3 to ~120 cm 2 /Vs for n = 1.6×10 17 1/cm 3 . These values are comparable with the best literature data, despite higher growth rates. For the UID β-Ga 2 O 3 layers, Si was identified as the major impurity responsible for the free carrier concentration with strong accumulation at the film/substrate interface. The reactor was also used to grow high quality strained β-(Al x Ga 1-x ) 2 O 3 /β-Ga 2 O 3 heterostructures and superlattices with Al content of up to 43%. The results suggest that the MOCVD enables growth of device quality β-Ga 2 O 3 and related alloys at a fast growth rate which is critical for high voltage power devices.
Miller et al. (Mon,) studied this question.