Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films

In this study, ε-Ga2O3 thin films were grown by mist chemical vapor deposition on a hexagonal (0001) GaN template and a cubic (111) SrTiO3 (STO) substrate. By analyzing the obtained X-ray diffraction (XRD) φ-scans, it was found that the ε-Ga2O3 epitaxial thin films grown on both GaN and STO exhibited an orthorhombic structure. In addition, a method was proposed to distinguish between hexagonal and orthorhombic structures on the basis of the relationships between the 2θ and χ angles for these structures, obtained from the XRD studies. Finally, a mechanism was discussed on the basis of angle relationships, where three rotational domains were observed for orthorhombic ε-Ga2O3 on GaN and STO. Transmission electron microscopy was then employed to determine whether the ε-Ga2O3 thin films on the GaN template and STO substrate consisted of columnar ε-Ga2O3 comprising small domains and intermediate layers between the ε-Ga2O3 film and the substrate.