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Indium selenide (InSe) thin films have been grown at 230−420 °C by low-pressure metal−organic chemical vapor deposition (MOCVD) using the single-source precursors (tBu)2In(μ-SetBu)2 and (Me2EtC)In(μ3-Se)4. Characterization of the films by energy-dispersive X-ray analysis (EDX) showed those grown from (tBu)2In(μ-SetBu)2 to be indium rich, while those grown from (Me2EtC)In(μ3-Se)4 are stoichiometric InSe. Transmission electron microscopy (TEM) indicates that the film morphology and crystallinity are highly dependent on the precursor and the deposition temperature. At low temperatures <330 °C ball-like morphologies are observed, while deposition at 350−370 °C results in highly crystalline textured films. Use of (tBu)In(μ3-Se)4 as the precursor at 320−420 °C results in indium metal films. The relationship between the precursor's structure and the film's morphology and chemical composition are discussed. The efficacy of the single-source precursor approach is considered with respect to elemental composition, phase formation, and film morphology.
Stoll et al. (Fri,) studied this question.