Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption

Emulating the essential synaptic working principles using a three-terminal synaptic transistor has been an important research field in recent years. Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional (1D) electronic devices. In this letter, zinc-tin oxide (ZnSnO) nanofibers were fabricated by electrospinning, and the synaptic transistors based on ZnSnO nanofibers were integrated. To mimic the synaptic behavior of human brain, LiClO 4 dissolved in polyethylene oxide was used as the gate electrolyte in the synaptic transistors. The plasticities, including short term and long term, are mimicked with the help of electrolyte ion dynamics under low and large bias voltage, and an energy consumption of as low as 0.44 pJ per event is observed. This work demonstrates a new approach for establishing the large-scale, energy-efficient 1D artificial synapses for neuromorphic networks.