Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS2

Abstract 2D layers of metal dichalcogenides are of considerable interest for high‐performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS 2 nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large‐size and high‐quality SnS 2 atomic layers still remains a challenge. Herein, a salt‐assisted chemical vapor deposition method is provided to synthesize atomic‐layer SnS 2 with a large crystal size up to 410 µm and good uniformity. Particularly, the as‐fabricated SnS 2 nanosheet‐based field‐effect transistors (FETs) show high mobility (2.58 cm 2 V −1 s −1 ) and high on/off ratio (≈10 8 ), which is superior to other reported SnS 2 ‐based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron–phonon scattering with the temperature. Moreover, SnS 2 can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS 2 endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.