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All-inorganic CsPbI2Br perovskite solar cell with an inverted architecture of indium-tin oxide/poly3-(4-carboxylbutyl)thiophene/CsPbI2Br/(6,6)-phenyl-C61-butyric acid methyl ester/C60/bathocuproine/Ag was fabricated. Together with the incorporation of nickel iodide, perovskite crystallinity and film morphology were promoted. Also, suppressed trap-state density in perovskite film was accomplished due to the passivation effect. Consequently, enhanced champion efficiency of 13.88% with VOC of 1.141 V, JSC of 16.02 mA/cm2, and fill factor of 75.96% was delivered by the doped optimal device, compared with the efficiency of 11.97% of the reference device. Superior device stability was demonstrated for the optimal device both in ambient atmosphere and N2-filled glovebox, without encapsulation. Moreover, improved light stability was also confirmed for optimal device by prolonged operation time, under continuous illumination of simulated solar spectrum. In addition, high-temperature annealing or sintering of interlayer was eliminated by utilizing solution-processed poly3-(4-carboxylbutyl)thiophene-CH3NH2 (P3CT-CH3NH2) as the hole-transport layer. This work provides an alternative inverted architecture and an effective ion-doping strategy for efficient and stable all-inorganic perovskite solar cells (PSCs), which would help promote the development of PSC technology.
Chen et al. (Tue,) studied this question.