Electrical charge state identification and control for the silicon vacancy in 4H-SiC

Abstract Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (Vₒ₈ VSi) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from Vₒ₈ VSi defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost 50 \% 50% via application of external bias. Furthermore, we identify charge state transitions of Vₒ₈ VSi by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of Vₒ₈ VSi at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, Vₒ₈ VSi defect ensembles in 4H-SiC highly suitable for quantum applications.