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Flexible ferroelectric devices have been a hot-spot topic because of their potential wearable applications as nonvolatile memories and sensors. Here, high-quality (111)-oriented BiFeO3 ferroelectric films are grown on flexible mica substrates through an appropriate design of SrRuO3/BaTiO3 double buffer layers. BiFeO3 exhibits the largest polarization (saturated polarization Ps ≈ 100 μC/cm2, remnant polarization Pr ≈ 97 μC/cm2) among all the reported flexible ferroelectric films, and ferroelectric polarization is very stable in 104 bending cycles under 5 mm radius. Accordingly, the ferroelectric memristor behaviors are demonstrated with continuously tunable resistances, and thus, the functionality of spike-timing-dependent plasticity is achieved, indicating the capability of flexible BiFeO3-based memristors as solid synaptic devices. Moreover, in artificial neural network simulations based on the experimental characteristics of the memristor, a high recognition accuracy of ∼90% on handwritten digits is obtained through online supervised learning. These results highlight the potential wearable applications of flexible ferroelectric memristors for data storage and computing.
Sun et al. (Thu,) studied this question.