Key points are not available for this paper at this time.
, reliable three-level switching endurance over 100 cycles, and stable three-level retention capability over 20 000 s, are achieved in our memory. Furthermore, an imaging system with a nonvolatile information storage function is demonstrated in a 16 × 5 array of FG-OFET NVMs.
Xu et al. (Wed,) studied this question.