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With the advent of the age of big data and the maturity of internet technologies, the Internet of Things puts more demands on data computing, and the development of the next generation of data computing components is particularly important. In recent decades, artificial synapses have received extensive attention because of their self-learning, massive parallel, and high energy efficiency. Among various materials for the fabrication of synaptic devices, halide perovskites with imperfections have great potential because of ion migration and charge trapping effects. Organometal halide perovskite (OHP)-based synaptic devices successfully emulate synaptic plasticity and learning process, and metal halide perovskites (MHPs) become the active materials of photoelectric synaptic devices. In this review, we introduced the ideal characteristics of halide perovskites needed to ensure high-performance artificial synapses, and recent advances in the development and application of perovskite-based synaptic devices are comprehensively discussed.
Chen et al. (Sun,) studied this question.