Key points are not available for this paper at this time.
An RRAM macro equips a hybrid self-tracking reference and a low ripple charge pump is presented. It realizes configurable read windows and a consistent write performance at operation voltage range of 1.62V~3.63V. It shows 6.5ns and 10ns access time at 0.7V can be achieved for OTP (one-time-program) and 10K endurance applications, respectively.
Chou et al. (Mon,) studied this question.