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Abstract Designing suitable material systems to construct artificial synapses and exploring novel synaptic functions is a crucial step toward the realization of efficient large‐scale bioinspired neuromorphic systems. In this work, flexible and insoluble bio‐memristor devices are fabricated by precisely engineering the molecular structures of wool keratin. This flexible Ag/keratin/indium tin oxide‐polyethylene naphthalate synaptic device possesses enhanced mechanical resistance, which is achieved by photo‐cross‐linking keratin molecules, and can withstand a bending radius of up to 1.2 mm. This device is promising for implantable applications because it is water‐resistant. When modulated by triangle‐wave DC voltages and pulsed voltages, this flexible electronic device emulates typical memristor characteristics and synaptic functions, including potentiation/depression, spike timing dependent plasticity, and long‐term/short‐term plasticity. Simulation results indicate that a memristor network made by this wool‐keratin based device has ≈ 95.8% memory learning accuracy and capability for pattern learning. Combined, these features prove that the cross‐linked wool‐keratin based device has potential in wearable and flexible neuron computing systems.
Shi et al. (Sun,) studied this question.