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A direct experimental test has revealed that heterojunction energy-band discontinuities are nontransitive. This result was obtained by an x-ray photoemission-spectroscopy investigation of abrupt (110) interfaces in the heterojunction series Ge/CuBr, CuBr/GaAs, and GaAs/Ge. The sum of the valence-band discontinuities for these intefaces is 0. 64 0. 05 eV, a large deviation from the zero sum expected by transitivity.
Waldrop et al. (Mon,) studied this question.