Silicon-Interconnect Fabric for Fine-Pitch (≤10 μm) Heterogeneous Integration

The apparent saturation of aggressive Moore's law scaling of semiconductor technologies is pushing the boundaries of traditional packaging and integration schemes to accommodate the ever-growing data bandwidth and heterogeneity demands. In this article, we demonstrate the silicon-interconnect fabric (Si-IF) technology as a superior alternative to conventional printed circuit boards (PCBs) to enhance system scaling. The Si-IF is a silicon-based, package-less, fine-pitch, highly scalable, heterogeneous integration platform to assemble and integrate massive wafer-scale systems. In this technology, dielets are closely assembled on the Si-IF at small interdielet spacings ( ≤ 50 μm) using fine-pitch ( ≤ 10 μm) die-to-substrate interconnects allowing for tight integration on a system-level package. To achieve these fine-pitch interconnects, a novel assembly technique using solder-less direct metal-metal copper-copper (Cu-Cu) thermal compression bonding was developed. Using this process, sub-10- μm-pitch interconnects with a low specific contact resistance of ≤ 0.7 Ω·μm 2 and high shear force of 90 N for 4-mm 2 dies were successfully demonstrated. Moreover, these fine-pitch interconnects combined with the small interdie spacing provide a large number of parallel short links ( ≤ 500 μm) with low loss (≤2 dB) for interdielet communication that is comparable to on-chip connections. Consequently, simple buffers can transfer data between dies using a Simple Universal Parallel intERface for chips (SuperCHIPS) protocol at low link latency (<; 20 ps), low energy per bit (≤0.03 pJ/b), and high data rates (up to 10 Gb/s/link), corresponding to an aggregate data bandwidth of up to 8 Tb/s/mm. The benefits of the SuperCHIPS interface are experimentally demonstrated using functional dielet assembly on the Si-IF to show 4- 23× higher data bandwidth, 3- 65× lower latency, and 5- 40× lower energy per bit compared to existing integration schemes.