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The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane, dislocation-free, site-controlled, intimately positioned with the Si device layer, and placed right on top of the buried oxide layer to form "InP-on-insulator". These attributes allow for the realization of various photonic functionalities using the epitaxial InP, with efficient light interfacing between the III-V devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires, square cavities, and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.
Yan et al. (Sun,) studied this question.