Efficient Broadband Near‐Infrared Emission in the GaTaO4:Cr3+ Phosphor

Abstract Efficient broadband near‐infrared (NIR) emitting materials with an emission peak centered above 830 nm are crucial for smart NIR spectroscopy‐based technologies. However, the development of these materials remains a significant challenge. Herein, a series of design rules rooted in computational methods and empirical crystal‐chemical analysis is applied to identify a new Cr 3+ ‐substituted phosphor. The compound GaTaO 4 :Cr 3+ emerged from this study is based on the material's high structural rigidity, suitable electronic environment, and relatively weak electron–phonon coupling. Irradiating this new phosphor with 460 nm blue light generates a broadband NIR emission (λ em,max = 840 nm) covering the 700–1100 nm region of the electromagnetic spectrum with a full width at half maximum of 140 nm. The phase has a high internal quantum yield of 91% and excellent thermal stability, maintaining 85% of the room temperature emission intensity at 100 °C. Fabricating a phosphor‐converted light‐emitting diode device shows that the new compound generates an intense NIR emission (178 mW at 500 mA) with photoelectric efficiency of 6%. This work not only provides a new material that has the potential for next‐generation high‐power NIR applications but also highlights a set of design rules capable of developing highly efficient long‐wavelength broadband NIR materials.