January 21, 2022Open Access

Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer

SCSang Hyun ChoiKorea Advanced Institute of Science and Technology SPSee‐On ParkKorea Advanced Institute of Science and Technology SSSeokho SeoKorea Advanced Institute of Science and Technology

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Abstract

pulses, 28 days at 85°C, and 6.7 times, respectively. These results suggest even amorphous-based systems, elaborately tuned structural variables, can help design more reliable CBRAMs.

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