June 9, 2022Open Access
Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission
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Abstract
We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.