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at 300 K at the wavelength of 2.7 μm, which is exceeding the working region of InGaAs detectors. This research shows that graphene can be used as an efficient platform for silicon-based SWIR detection and provides a strategy for the low-power, uncooled, high-gain infrared detectors compatible with the CMOS process.
Jiang et al. (Thu,) studied this question.
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