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Abstract Carbon nanotube (CNT) field‐effect transistors (FETs) have been considered ideal building blocks for radiation‐hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT‐based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 10 4 MeVcm 2 mg −1 level of the laser‐equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 10 13 MeV g −1 for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation‐hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high‐energy solar and cosmic radiation environments.
Zhu et al. (Fri,) studied this question.