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Imaging sensing holds a remarkable place in modern electronics and optoelectronics for the complementary metal-oxide-semiconductor integration of high-speed optical communications and photodetection with the merits of high-speed operation, cost-effectiveness, and noncomplex fabrication. The optimum quality of image sensing relies on noise, sensitivity, power consumption, voltage operation, and speed imaging to access and compete with the state-of-the-art image sensing devices in the industry. Many studies have been conducted to address these issues; however, performance has not yet been optimized and solutions are still in the works. In this review, we briefly provide information on recent advances in image sensing using nanostructured emerging materials through nanofabrication integration including the technology evolution on traditional and modern technology platforms, general mechanisms, classification, and actual applications as well as existing limitations. Finally, new challenges and perspectives for the future trends of image sensing and their possible solutions are also discussed.
Iqbal et al. (Wed,) studied this question.