January 1, 2023Open Access

Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

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Abstract

N-doped InSnZnO (ITZO:N) thin films as the active layer of thin film transistors (TFTs) were prepared using radio frequency (RF) magnetron sputtering at room temperature.

Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

Key Points

Abstract

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