Key points are not available for this paper at this time.
This study presents a novel approach to designing a ternary inverter utilizing a negative transconductance (NTC) behavior field-effect transistor (FET) with pull-down switching. The NTC FET is constructed by combining partially-deposited p-type and n-type semiconductors. The key advantages of the NTC FET, including hysteresis-free operation and a clear peak-to-valley current ratio (PVCR) of 9.6 A/A, enable the proposed ternary inverter to exhibit stable transient characteristics over a duration of 250 sec, covering three logic states. The effectiveness of the design is further supported by experimental results and simulation analysis.
Building similarity graph...
Analyzing shared references across papers
Loading...
Kim et al. (Thu,) studied this question.
www.synapsesocial.com/papers/68e781e8b6db6435876f4851 — DOI: https://doi.org/10.1109/led.2024.3368346
Somi Kim
Yunchae Jeon
H.S. Cho
IEEE Electron Device Letters
University of Ottawa
Gachon University
Building similarity graph...
Analyzing shared references across papers
Loading...