Key points are not available for this paper at this time.
High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.
Building similarity graph...
Analyzing shared references across papers
Loading...
Muhammad Mahmudul Hasan
Chunlei Wang
Nezih Pala
Nanomaterials
University of Miami
Rensselaer Polytechnic Institute
Florida International University
Building similarity graph...
Analyzing shared references across papers
Loading...
Hasan et al. (Fri,) studied this question.
www.synapsesocial.com/papers/68e761b8b6db6435876d7852 — DOI: https://doi.org/10.3390/nano14050460