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Abstract Interface engineering is a critical parameter for optimal optoelectronic device performance. In quasi‐2D perovskite light emitting diodes (PeLEDs), traditional poly (3,4‐ethylene dioxythiophene) polystyrene sulfonate (PEDOT:PSS) hole injection layer (HIL) is replaced by self‐assembled monolayer (SAM) 2‐(3,6‐dibromo‐9H‐carbazol‐9‐yl) ethyl phosphonic acid (Br‐2PACz) HIL. The deep highest occupied molecular orbital (HOMO @ −5.73 eV) of Br‐2PACz facilitates the efficient hole‐injection along with a reduction in leakage current by 4–5 orders of magnitude as compared to PEDOT:PSS (HOMO @ −5.00 eV) HIL based optimized PeLEDs. Ultra‐thin SAM‐based Br‐2PACz HIL presents two challenges: i) device reproducibility is hindered by spatial inhomogeneity, and ii) it fails to regulate nonradiative recombination at the perovskite/HIL interface. To address these challenges, the ultra‐thin interlayer of atomic layer deposited aluminum oxide (Al 2 O 3 ) is utilized between Br‐2PACz, and perovskite which aids in passivating the interfacial states at the HIL/perovskite interface. With the optimized thickness of Al 2 O 3 interlayer (3 nm), the device's external quantum efficiency (EQE) improved from 9.47% to 13.14%, accompanied by luminous efficiency of 42.8 cd A −1 . An ultra‐thin interlayer of lithium fluoride (LiF) (2 nm) is implemented on the top side of the perovskite, which can provide 1.5 times increase in the device's LT 50 stability.
Laxmi et al. (Wed,) studied this question.
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