High-Detectivity and Broadband Photodetector Based on LiInP2Se6 Semiconductors

Photodetectors with high-detectivity and broadband response have attracted tremendous interest in various optoelectronic applications. LiInP2Se6 as an emerging 2D semiconductor exhibits significant potential in optoelectronic applications due to its suitable bandgap and low dark current. Herein, high-quality LiInP2Se6 crystals were successfully grown by the chemical vapor transport (CVT) method, and LiInP2Se6-based photodetectors were fabricated with a typical metal–semiconductor–metal (MSM) structure. The photodetectors present outstanding performance with a high detectivity of 9.48 × 1012 Jones and a large on/off ratio coming up to 102 under 532 nm illumination. Furthermore, the photoresponse wavelength range can be expanded from visible to near-infrared (NIR) due to defect engineering, indicating the potential to realize broadband photodetection. These results demonstrate LiInP2Se6 as an emerging 2D semiconductor for optoelectronic applications and a promising candidate for photodetection with high detectivity and broadband response.