Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model

The present work proposes an analytical model for the switching transients of wide bandgap (WBG) semiconductor devices, specifically Gallium Nitride (GaN), an increasingly popular technology used in power electronic systems. These devices offer high efficiency but pose challenges due to parasitic capacitances and inductances in their operation. This paper introduces a numerical solver to accurately predict the switching behavior, taking into account non-linear characteristics, complex parasitic elements, and their effects on power losses. Experimental validation demonstrates the model's accuracy in predicting switching losses for different operating conditions, explores the Zero-Voltage Switching (ZVS) frontier and discusses the optimal PCB layout to mitigate parasitic effects, offering insights for the design of efficient power electronic circuits.