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Cryo-CMOS control of qubits has been proposed to increase compactness and reliability and to reduce latency. Several BulklFD-SOl CMOS/FinFET qubit controllers have been proposed designed to operate inside a dilution refrigerator (DF) at - 4K for interfacing various qubits 1–3. Alternatively, SiGe HBT can also operate well at cryogenic temperatures (CTs) and has exceptional noise 4 and linearity characteristics, making it suitable for interfacing with qubits.
Peng et al. (Sun,) studied this question.
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