Effect of Annealing Temperature on the Structural Properties of Dual Solution Synthesized AlS: ZnS Thin Films

Using two solution-based techniques—solution growth technique (SGT) and sequential ionic layer adsorption and reaction (SILAR) AlS: ZnS alloyed thin films were successfully produced on glass substrates. The sources of Al, Zn, and S were aluminum sulphate (AlSO4.7H20), zinc sulphaate (ZnSO4.7H20), and sodium thiosulphate (Na2S2S03). The complexing agent that was utilized was ethylene diamine tetraacetic acid (EDTA). Using a Master Chef Annealing Machine, the deposited alloyed samples were annealed between 373K and 523K. The scanning electron microscope (SEM) and X-ray diffractometer (XRD) were used for the crystallographic investigations. Samples R1 and R6 AlS: ZnS alloyed thin films exhibit well-defined peaks in their XRD pattern, indicating that they are polycrystalline in nature. We computed their grain sizes. Spectroscopy using Rutherford backscattering (RBS). Analysis using Rutherford backscattering spectroscopy (RBS) verified the composition of aluminum, zinc, and sulfur in the alloyed thin films. The microstructure of the deposited alloyed thin films is revealed by the results of surface electron microscopy. Two significant semiconductor materials that have potential uses in optoelectronics, photovoltaics, and sensing devices are aluminum sulfide (AlS) and zinc sulfide (ZnS). Depositing these materials in thin films at a reasonable cost and with good efficiency is possible with dual solution synthesis. However, the annealing temperature, a crucial factor in establishing the crystal structure, morphology, and optical properties of these films, can have an impact on their structural characteristics. Prior studies have examined how the annealing temperature affects the structural characteristics of AlS and ZnS thin films separately; however, the dual solution-produced AlS: ZnS thin films have not received as much attention. The purpose of this work is to examine how the annealing temperature affects the crystal structure and surface morphology of AlS: ZnS thin films. The results of this investigation can offer significant understanding regarding the refinement of the annealing temperature to produce superior AlS: ZnS thin films for a range of uses. Based on their properties, sulphide alloyed thin films could find applications in microelectronics, window coating, and antireflection coating. They work well as coatings for eyeglasses and as absorber layers for photocells, among other applications.