Asymmetric Metal–Carboxylate Complexes for Synthesis of InGaP Alloyed Quantum Dots with Blue Emission

Indium phosphide (InP) quantum dots (QDs) have attracted significant interest as next-generation light-emitting materials. However, the synthesis of blue-emitting InP-based QDs has lagged behind that of established green- and red-emitting InP QDs. Herein, we present a strategy to synthesize blue-emitting QDs by forming an InGaP alloy composition. The introduction of asymmetric In–carboxylate and Ga–carboxylate complexes resulted in a balanced synthetic reactivity between In–P and Ga–P, leading to the formation of InGaP alloyed QDs. The resultant In1–xGaxP alloyed QDs exhibited a broad range of photoluminescence (PL) tunability, spanning from 535 nm (InP) to 465 nm (In0.62Ga0.38P), depending on the In/Ga ratio used in the synthesis. In contrast, synthesis with symmetric In–carboxylate and Ga–carboxylate complexes produced a core/shell structure of InP/GaP QDs, which did not exhibit a blue shift of the PL peak with Ga addition. By employing a core/shell structure of In0.62Ga0.38P/ZnS QDs, we achieved a PL quantum yield of 42% at 475 nm. This work highlights the material-processing strategy essential for forming alloyed structures in III–V ternary systems.