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This article compares the performance of two Vertical Non-Uniform Channel Double Gate Tunnel Field Effect Transistors (VNUCDGTFETs), a normal all-Silicon Tunnel Field-Effect Transistor (TFET) having a pocket and another one a Gallium Antimonide/Silicon heterojunction TFET with pocket. GaSb is a III-V narrow energy band gap material, employed in the source area of the TFET structure to decrease the tunneling width and thus to make more number of carriers capable enough to tunnel through the heterojunction. The proposed source pocket heterojunction non uniform channel TFET presents superior performance as compared to the conventional non uniform channel vertical TFET with a pocket, regarding a larger I ON /I OFF ratio, a reduced sub-threshold swing, and a smaller threshold voltage at V DS = 0.5 V. Furthermore, the proposed TFET device undergoes a comprehensive analysis of both DC parameters and various analog/RF parameters.
Macherla et al. (Mon,) studied this question.