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Rectifiers performance affects the overall efficiency of microwave wireless power transfer systems. The performance of the rectifier device (usually used Schottky diode) determines the upper limit of the rectifier. In order to improve the efficiency and input power of the rectifier, we designed and prepared thin barrier AlGaN/GaN heterojunction rectifier devices. The device achieved 80% conversion efficiency and operates at 5.8 GHz with maximum input power of 28.5 dBm.
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Wang et al. (Wed,) studied this question.
www.synapsesocial.com/papers/68e6b28ab6db643587633744 — DOI: https://doi.org/10.1109/wptce59894.2024.10557314
Ce Wang
Ping Lu
Fei Cheng
Sichuan University
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