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Abstract The dangling bonds and surface defects at the grain boundaries of three-dimensional (3D) perovskite provide convenient conditions for non-radiative recombination and ion migration, which degrades the stability of perovskite materials. Herein, we prepared single-component lateral epitaxial heterostructure perovskites using a one-step solution method by rare earth Er3+ doping. Through photoluminescence (PL) and time-resolved PL spectroscopy, the erbium-doped CsPb(BrxI1−x)3 heterostructure microplate forms a stable dual-wavelength emission with enhanced PL intensity and lifetime. We find that rare earth doping can effectively suppress ion migration by improving the ion migration barrier and facilitating the intrinsic stable heterostructure formation with desired dual-wavelength emission and improved radiation recombination rate. The discovery sheds a new perspective on inhibiting ion migration by trivalent B-site doping of rare earth ions and provides a basis for the preparation of single-component heterostructure perovskite.
Zhuang et al. (Fri,) studied this question.