Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All‐Dielectric Amorphous Germanium Metasurfaces

Transparent amorphous germanium (a‐Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short‐wavelength infrared (SWIR) spectrum. Herein, the successful application of a‐Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al 0.3 InAsSb p–i–n photodiode across a broad‐wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different‐wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite‐difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a‐Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.