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Abstract We report on the ZnONRs and ZnONRs/NiO heterostructure synthesized by the chemical bath deposition technique. The samples were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, Raman spectroscopy, and UV–vis spectroscopy techniques. XRD, Raman spectroscopy, and SEM analysis revealed the formation of ZnONRs/NiO heterostructure. Raman spectra showed a decrease in intensity of low-frequency non-polar and active ( E 2 (low)) vibrational mode when NiO is deposited onto ZnONRs. The PL spectra revealed ultraviolet and visible emission bands, whose intensities decreased when NiO grew onto ZnONRs. The Au/NiO/ZnONRs/FTO heterostructure Schottky diode performed better than the Au/ZnONRs/FTO Schottky diode. The Au/NiO/ZnONRs/FTO heterojunction demonstrated a current rectification ratio of 3.03 × 10 2 at ± 2 V and a forward current of 1.51 × 10 −3 A, which is higher than that of Au/ZnONRs/FTO having a rectification ratio of 6.79 × 10 1 at ± 2 V and a forward current of 1.651 × 10 −5 A.
Mwankemwa et al. (Fri,) studied this question.