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As the integrated circuits is scaled few problems appear at the lowest levels of interconnects — high resistance of copper lines and copper electromigration. High resistance is connected with the increasing contribution of the electron surface scattering and grain boundary scattering. Moreover, copper lines require barrier layers decreasing the cross-section of the copper part of the line. Also the resistance of copper to electromigration is insufficient for the technology node below 5nm. Therefore, it is necessary to look for alternative materials to replace copper, which will provide high resistance to electromigration and low resistance of the lines. The most promising candidates are Ru, Mo, Rh, Ir. The advantages and disadvantages of these materials are considered in this paper.
Rogozhin et al. (Wed,) studied this question.