Key points are not available for this paper at this time.
For high-frequency switching applications, silicon carbide (SiC) devices are more suitable than silicon-based devices, which is conducive to improving the efficiency and power density of power electronic equipment. However, as the switching frequency increases, the influence of parasitic parameters on the switching characteristics of devices becomes increasingly apparent. When SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are applied in bridge circuits, the crosstalk problem easily occurs with the complementary conduction of upper and lower transistors, which seriously limits the promotion of SiC MOSFETs. However, the existing crosstalk suppression drive circuit tends to increase the switching loss, switching delay, and control complexity; therefore, a gate drive with crosstalk suppression capability is proposed. In this paper, the gate drive has two features: a negative voltage to shut down the SiC MOSFET; and an adjustment of the gate-source equivalent impedance. To accomplish this goal, the mechanism of crosstalk voltage generation is analyzed. Furthermore, the operation principle of the gate drive is analyzed, and the parameters of the gate drive are designed. Eventually, the proposed gate drive is verified by an LTspice simulation and experimental platform. The results prove that the gate drive can suppress the crosstalk voltage without affecting the switching speed.
Hao et al. (Wed,) studied this question.