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Abstract Strong correlation, breaking symmetry, band topology, collective excitation, and quantum confinement represent important features of quantum materials. When quantum materials intersect with spintronics, these key features fundamentally enhance the performance of spin-dependent phenomena. In this review, we examine recent advancements in the material requirements for spintronics and investigate the role of quantum effects in enhancing the functionalization of these devices. Current-induced spin-orbit torques offer a versatile tool to manipulate and excite magnetic order, with decoupled read and write paths that excite various types of materials. One crucial aspect of a spintronic device is the transition of writing layers from traditional transport to quantum transport. The recording layer, on the other hand, employs two-dimensional magnetic materials to achieve the ultimate limit of single-layer magnetic storage. Additionally, the utilization of antiferromagnetic and altermagnetic materials makes them suitable for high-density memories with minimal inter-bit dipole interactions and fast writing speed. Exploiting these emerging quantum materials, in spintronic devices and exploring how quantum effects enhance device functionality show significant potential for spintronic applications in the future.
Guo et al. (Thu,) studied this question.