Cathodoluminescence of polarization-induced energy states at AlGaN/GaN interface

Abstract Recent progress in manufacturing high-electron-mobility transistors and optoelectronic devices highlights the necessity of understanding the charge dynamics and its impact on the optical properties inside heterostructures. Herein, we study the optical properties of GaN / A l 0.23 G a 0.77 N / GaN heterostructures using cathodoluminescence (CL) and photoluminescence (PL) spectroscopy. We explore the influence of generated secondary carriers after electron illumination and their penetration depth on the luminescence spectra. Our findings indicate that a higher laser power intensifies the PL response and establishes Fabry–Perot-like resonances. Furthermore, the intensity of the CL response shows a linear behavior versus the acceleration voltage and the current of electron beams for the yellow luminescence peak. A near-infrared CL peak (740 nm) is observed only when illuminating the sample with high currents that is attributed to the trapping of the secondary electrons within the Schottky barrier and the manipulation of the two-dimensional electron gas and the quantum-confined states within the barrier. Self-consistent Poisson–Schrödinger simulations verify this aspect. This research unveils the intricate charge dynamics associated with the interaction of electron beams with heterostructure systems, paving the way for innovative optoelectronic applications in semiconductor devices.