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The unique features of two-dimensional (2D) materials provide significant opportunities for the development of transparent and flexible electronics. Recently, ambipolar 2D semiconductors have advanced innovative applications such as CMOS-like circuits, reconfigurable circuits, and ultrafast neuromorphic image sensors. Here, we report on the fabrication of full 2D ambipolar field-effect transistors (FETs), in which graphene serves as the source/drain/gate electrodes, WSe
Ming et al. (Thu,) studied this question.