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Abstract Fe 3 GaTe 2 , as a layered ferromagnetic material, has a Curie temperature ( T c ) higher than room temperature, making it the key material in next-generation spintronic devices. To be used in practical devices, large-sized high-quality Fe 3 GaTe 2 thin films need to be prepared. Here, the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology. Furthermore, the T c of the samples raises as the film thickness increases, and reaches 367 K when the film thickness is 60 nm. This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe 3 GaTe 2 .
王 et al. (Tue,) studied this question.