Conjugated Polymer‐Based Photo‐Crosslinker for Efficient Photo‐Patterning of Polymer Semiconductors

Abstract Photo‐patterning of polymer semiconductors using photo‐crosslinkers has shown potential for organic circuit fabrication via solution processing techniques. However, the performance of patterning, including resolution ( R ), UV light exposure dose, sensitivity ( S ), and contrast ( γ ), remains unsatisfactory. In this study, a novel conjugated polymer based photo‐crosslinker ( PN3 , Figure 1a) is reported for the first time, which entails phenyl‐substituted azide groups in its side chains. Due to the potential π – π interactions between the conjugated backbone of PN3 and those of polymer semiconductors, PN3 exhibits superior miscibility with polymer semiconductors compared to the commonly used small molecule photo‐crosslinker 4Bx (Figure 1a). Consequently, photo‐patterning of polymer semiconductors with PN3 demonstrates improved performance with much lower UV light exposure dose, higher S and higher γ compared to 4Bx . By utilizing electron beam lithography, patterned arrays of polymer semiconductors with resolutions down to 500 nm and clearer edges are successfully fabricated using PN3 . Furthermore, patterned arrays of PDPP4T , the p ‐type semiconductor (Figure 1b), after being doped, can function as source‐drain electrodes for fabricating field‐effect transistors (FETs) with comparable charge mobility and significantly lower sub‐threshold swing value compared to those with gold electrodes.